the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. npn silicon epitaxial transistor 2SC4783 npn silicon epitaxial transistor data sheet document no. d15616ej2v0ds00 (2nd edition) date published october 2004 ns cp(k) printed in japan 2001 the mark shows major revised points. description the 2SC4783 is npn silicon epitaxial transistor. features ? high dc current gain: h fe2 = 200 typ. ? high voltage: v ceo = 50 v ? can be automatically mounted ordering information part number package 2SC4783 sc-75 (usm) absolute maximum ratings (t a = 25c) collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 5.0 v collector current (dc) i c(dc) 100 ma collector current (pulse) note1 i c(pulse) 200 ma total power dissipation note2 p t 200 mw junction temperature t j 150 c storage temperature range t stg ?55 to + 150 c notes 1. pw 10 ms, duty cycle 50% 2. when mounted on ceramic substrate of 3.0 cm 2 x 0.64 mm package drawing (unit: mm) 0.3 1.6 0.1 0.8 0.1 2 0.2 +0.1 ?0 0.5 1: emitter 2: base 3: collector 0.5 1.0 1.6 0.1 3 1 0.6 0.75 0.05 0 to 0.1 0.15 +0.1 ?0.05 +0.1 ?0
data sheet d15616ej2v0ds 2 2SC4783 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit collector cut-off current i cbo v cb = 60 v, i e = 0 100 na emitter cut-off current i ebo v eb = 5.0 v, i c = 0 100 na dc current gain note h fe1 v ce = 6.0 v, i c = 0.1 ma 50 ? h fe2 v ce = 6.0 v, i c = 1.0 ma 90 200 600 ? base to emitter voltage note v be v ce = 6.0 v, i c = 1.0 ma 0.62 v collector saturation voltage note v ce(sat) i c = 100 ma, i b = 10 ma 0.15 0.30 v base saturation voltage note v be(sat) i c = 100 ma, i b = 10 ma 0.86 1.00 v gain bandwidth product f t v ce = 6.0 v, i e = ? 10 ma 150 250 mhz output capacitance c ob v ce = 6.0 v, i e = 0 ma, f = 1.0 mhz 3.0 4.0 pf note pulsed: pw 350 s, duty cycle 2% h fe classfication marking l4 l5 l6 l7 h fe2 90 to 180 135 to 270 200 to 400 300 to 600
data sheet d15616ej2v0ds 3 2SC4783 typical characteristics (t a = 25c) collector current vs. collector to emitter voltage 0 0.5 1.0 1.5 2.0 100 80 60 40 20 0.2 0.3 0.4 0.5 0.6 0.8 0.7 0.9 1.0 i b = 0.1 ma v ce - collector to emitter voltage - v i c - collector current - ma collector and base saturation voltage vs. collector current 5 2 1 10 100 20 50 1 0.2 0.5 0.1 0.05 0.02 0.01 i c = 10 i b . i c - collector current - ma v be(sat) - base saturation voltage - v v ce(sat) - collector saturation voltage - v v ce(sat) v be(sat) output capacitance vs. reverse voltage 5 2 1 10 100 20 50 10 2 5 1 0.5 0.2 0.1 f = 1.0 mhz v cb - collector to base voltage - v c ob - output capacitance - pf collector current vs. base to emitter voltage v be - base to emitter voltage - v i c - collector current - ma 0.4 0.5 0.6 0.7 0.8 0.9 1. 0 100 10 30 1 3 0.1 0.3 0.01 0.03 t a = 75 ?c 25 ?c ?25 ?c v ce = 6.0 v collector current vs. collector to emitter voltage 20 10 30 40 50 10 8 6 4 2 0 i b = 5.0 a 45 40 35 30 25 20 15 10 v ce - collector to emitter voltage - v i c - collector current - ma total power dissipation vs. ambient temperature t a - ambient temperature - ?c p t - total power dissipation - mw 0 100 125 75 25 150 200 300 free air 250 150 50 50 100 when mounted on ceramic substrate of 3.0 cm x 0.64 mm 2
data sheet d15616ej2v0ds 4 2SC4783 gain bandwidth product vs. emitter current ? 5 ? 2 ? 1 ? 10 ? 10 0 ? 20 ? 50 1000 200 500 100 50 20 10 i e - emitter current - ma f t - gain bandwidth product - mhz v ce = 6 v 1 v dc current gain vs. collector current 1 0.3 0.1 3 10 0 10 30 1000 500 200 100 50 20 10 i c - collector current - ma h fe - dc current gain v ce = 6 v 1 v dc current gain vs. collector current 1 0.3 0.1 3 10 0 10 30 1000 500 200 100 50 20 10 i c - collector current - ma h fe - dc current gain v ce = 6.0 v t a = 75 ?c 25 ?c ? 25 ?c
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